Preparation and properties of gadolinium oxynitrides

Preparation and properties of gadolinium oxynitrides

For the continued scaling of metal oxide semiconductor (MOS) devices to achieve high performance and good integration,the thickness of silicon dioxide gate dielectrics must be decreased.As the thickness of gate dielectrics decreases,direct tunneling current increases exponentially.therefore,high-k gate dielectrics have recently received much attention,because tunneling current can be reduced by increasing physical film thickness.

On this concept the idea mainly focusses on the preparation and detailed analysis of Gadolinium oxynitrides.